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 APT40GL120JU3
ISOTOP(R) Buck chopper Trench + Field Stop IGBT4 Power module
C
VCES = 1200V IC = 40A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies Features * Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * ISOTOP(R) Package (SOT-227) * Very low stray inductance * High level of integration Benefits * Low conduction losses * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
G
E
A
E G C
A
ISOTOP(R)
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C Max ratings 1200 65 40 70 20 220 70A @ 1100V Unit V A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-5
APT40GL120JU3 - Rev 0 July, 2009
APT40GL120JU3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 35A Tj = 150C VGE = VCE , IC = 1.2mA VGE = 20V, VCE = 0V Min Typ 1.85 2.25 5.8 Max 250 2.25 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= 15V ; VCE=600V IC=35A Inductive Switching (25C) VGE = 15V VCE = 600V IC = 35A RG = 12 Inductive Switching (150C) VGE = 15V VCE = 600V IC = 35A RG = 12 TJ = 25C VGE = 15V VCE = 600V TJ = 150C IC = 35A TJ = 25C RG = 12 TJ = 150C VGE 15V ; VBus = 900V tp 10s ; Tj = 150C Min Typ 1950 155 115 0.27 130 20 300 45 150 35 350 80 2.6 4 2 3 140 ns Max Unit pF C
ns
mJ mJ A
Chopper diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 150C Tc = 80C IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V
Min 1200
Typ
Max 100 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=1200V
di/dt =200A/s
Tj = 125C Tj = 25C Tj = 125C
380 360 1700
ns nC
www.microsemi.com
2-5
APT40GL120JU3 - Rev 0 July, 2009
Tj = 125C Tj = 25C
30 2.6 3.2 1.8 300
3.1 V
APT40GL120JU3
Thermal and package characteristics
Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min IGBT Diode 2500 -55
Typ
Max 0.68 1.2 20 175 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
29.2
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Anode
Collector
* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
Emitter
Gate
Dimensions in Millimeters and (Inches)
ISOTOP(R) is a registered trademark of ST Microelectronics NV
www.microsemi.com
3-5
APT40GL120JU3 - Rev 0 July, 2009
APT40GL120JU3
Typical Performance Curve
70 60 50 IC (A) 40 30 20 10 0 0 1 2 VCE (V) 3 4
TJ=25C TJ=150C
Output Characteristics (VGE=15V)
Output Characteristics 70 60 50 IC (A) 40 30 20 10 0 0 1 2 VCE (V) 3 4
VGE=9V
TJ = 150C
VGE=19V VGE=15V
70 60 50 IC (A) 40 30 20 10 0 5 6
Transfert Characteristics
TJ=25C
12 10 8 E (mJ) 6 4
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG =12 TJ = 150C
Eon
Eoff
TJ=150C
2 0
7
8
9 VGE (V)
10
11
12
13
0
10
20
30
40
50
60
70
IC (A) Reverse Bias Safe Operating Area 80 70
Eon
Switching Energy Losses vs Gate Resistance 10 8 E (mJ) 6 4 2 0 0 10 20 30 40 Gate Resistance (ohms) 50
VCE = 600V VGE =15V IC = 35A TJ = 150C
60 IC (A) 50 40 30 20 10 0 0 300 600 900 VCE (V) 1200 1500
VGE=15V TJ=150C RG=12
Eoff
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1
0.1 0.05 Single Pulse 0.9
IGBT
0.7 0.5 0.3
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
www.microsemi.com
4-5
APT40GL120JU3 - Rev 0 July, 2009
APT40GL120JU3
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 160
ZVS VCE=600V D=50% RG=12 TJ=150C Tc=75C
Forward Characteristic of diode
80 70 60 IF (A) 50 40 30
TJ=25C TJ=125C
120
80
40
Hard switching
ZCS
20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0 0 10 20 30 40 IC (A) 50 60 70
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0 0.00001
0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse
Diode
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
APT40GL120JU3 - Rev 0 July, 2009


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